PART |
Description |
Maker |
GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns 4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
TC528267 |
262144 Words x 8 Bits Multiport DRAM
|
Toshiba
|
MH4V36AM-6 MH4V36AM-7 |
FAST PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 快速页面模50994944位(4194304 - Word6位)动态随机存储器
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
MH4V64AWXJ-5 MH4V64AWXJ-6 |
FAST PAGE MODE 268435456 - BIT ( 4194304 - WORD BY 64 - BIT ) DYNAMIC RAM 快速页面模68435456 -位(4194304 - Word64 -位)动态随机存储器
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
MH4M365CNXJ-5 MH4M365CNXJ-6 MH4M365CNXJ-7 MH4M365C |
HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 超页模式150994944位(4194304 - Word6位)动态随机存储器 From old datasheet system
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
LC321664BJ LC321664BM LC321664BT-70 LC321664BT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
LC322271J LC322271T-70 LC322271T-80 LC322271M |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Write 2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|
LC321667BJ LC321667BM LC321667BT-70 LC321667BT-80 |
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode / Byte Write 1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
LC322271J LC322271T-80 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write 2迈可31072字16位),内存快速页面模式,字节
|
Sanyo Electric Co.,Ltd. Sanyo Electric Co., Ltd.
|
EDE1104AASE-5C-E EDE1108AASE-5C-E EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. 256M X 4 DDR DRAM, 0.6 ns, PBGA68
|
Elpida Memory, Inc.
|
MAX17605 MAX17601 MAX17603 MAX17600 MAX17602 CAT24 |
4A Sink /Source Current, 12ns, Dual MOSFET Drivers 2K/4K-Bit Serial EEPROM with Partial Array Write Protection 2K/4K-Bit偏串行EEPROM阵列写保 1K/2K/4K/8K/16K SPI Serial CMOS EEPROM 1K/2K/4K/8K/16K SPI 串行 互补型金属氧化物 电可擦可编程只读存储 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS 16K-Bit Microwire Serial EEPROM 16K的位微型导线串行EEPROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM
|
Maxim Integrated Products Atmel, Corp. ON Semiconductor TE Connectivity, Ltd.
|
TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 TC5565APL T |
65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|